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| ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC(cont) = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m PD = 1.5W Complementary part number ZXTP19060CFF Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. C B Features * * * High gain Low saturation voltage Low profile small outline package E E C B Pinout - top view Applications * * Motor drive Siren driver Ordering information Device ZXTN19060CFFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1E4 Issue 1 - October 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN19060CFF Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (c) Base current Peak pulse current Power dissipation @ Tamb =25C (a) Linear derating factor Power dissipation @ Tamb =25C (b) Linear derating factor Power dissipation @ Tamb =25C (c) Linear derating factor Power dissipation @ Tamb =25C (d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 160 160 60 6 7 5.5 1 12 0.84 6.72 1.34 10.72 1.50 12.0 2.0 16.0 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 149.3 93.4 83.3 60 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - October 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN19060CFF Characteristics Issue 1 - October 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN19060CFF Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. 160 160 60 7 6 6 Typ. Max. Unit Conditions 200 200 75 8.3 7 7 <1 50 20 Collector-emitter cut-off current ICEX Emitter-base cut-off current Collector-emitter saturation voltage IEBO VCE(sat) <1 <1 36 105 105 145 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 200 160 30 Transition frequency Input capacitance Output capacitance Delay time Rise time Storage time Fall time fT Cibo Cobo td tr ts tf 100 50 45 150 135 175 V V V V V V nA A nA nA mV mV mV mV mV mV IC = 100 A IC = 100 A, RBE 1k -1V < VBE < 0.25V IC = 10mA (*) IE = 100 A IE = 100mA, RBC 1k 0.25V > VBC > -0.25V IE = 100 A, VCB = 120V VCB = 120V, Tamb= 100C VCE = 120V, RBE 1k -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 40mA(*) IC = 5.5A, IB = 550mA(*) IC = 5.5A, IB = 550mA(*) IC = 5.5A, VCE = 2V(*) IC = 0.1A, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 6A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 50MHz pF 25 pF ns ns ns ns 2%. Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) BVCEX BVCEO or Emitter-base breakdown voltage BVEBO Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Collector-base cut-off current BVECX BVECO ICBO or or 1000 1100 880 350 280 50 130 310 19.3 27.3 13.2 682 90.9 300 s; duty cycle 1000 500 VEB = 0.5V, f = 1MHz(*) VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - October 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN19060CFF Typical characteristics Issue 1 - October 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN19060CFF Package outline - SOT23F D b b L1 L c e1 e E1 E E2 b R A A1 Dim. A A1 b c D e e1 Millimeters Min. 0.80 0.00 0.35 0.10 2.80 1.80 Max. 1.00 0.10 0.45 0.20 3.00 2.00 Inches Min. 0.0315 0.00 0.0153 0.0043 0.1102 0.0709 Max. 0.0394 0.0043 0.0161 0.0079 0.1181 0.0787 Dim. E E1 E2 L L1 R O Millimeters Min. 2.30 1.50 1.10 0.48 0.30 0.05 0 Max. 2.50 1.70 1.26 0.68 0.50 0.15 12 Inches Max. 0.0906 0.0590 0.0433 0.0189 0.0153 0.0019 0 Max. 0.0984 0.0669 0.0496 0.0268 0.0161 0.0059 12 0.95 ref 0.0374 ref Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - October 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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